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The Ti/c-Si solid state reaction : I. An ellipsometrical study
Nijs de, J.M.M. and Silfhout van, A. (1990) The Ti/c-Si solid state reaction : I. An ellipsometrical study. Applied Surface Science, 40 (4). pp. 333-347. ISSN 0169-4332
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| Abstract: | This paper is the first of a series of three articles in which we present the results and analyses of an extended study of the c-Si/Ti solid state reaction. In this paper we will discuss the spectroscopic ellipsometric investigation. Thin (≈10nm) Ti films are grown on clean Si(111) surfaces and are subsequently heated. The Si indiffusion and the Si-Ti intermixing are continuously registered by three-wavelengths ellipsometry. Two metastable intermediate phases are observed to form before the final state is obtained Spectroscopic ellipsometry (E = 2−4.5 eV) is used to characterize the as-deposited layer, the metastable intermediate phase and the final state. Analysis of these spectra shows that: (1) Si and Ti intermix during the initial Ti deposition, (2) a fast reordering of the Ti atoms occurs when the system is slightly heated (≈175°C), (3) a metastable, probably monosilicide phase with a large Si concentration gradient is obtained at ≈350°C, (4) a homogeneous metastable TiSi2 forms at ≈450°C, at ≈700°C a roughened TiSi2 layer with a surplus of c-Si is formed. |
| Item Type: | Article |
| Copyright: | © 1990 Elsevier |
| Research Group: | |
| Link to this item: | http://purl.utwente.nl/publications/70624 |
| Official URL: | http://dx.doi.org/10.1016/0169-4332(90)90033-V |
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