Optically activated ZnO/Sio2/Si cantilever beams


Suskia, J. and Largeaua, D. and Steyer, A. and Pol, F.C.M. van de and Blom, F.R. (1990) Optically activated ZnO/Sio2/Si cantilever beams. Sensors and Actuators A: Physical, 24 (3). pp. 221-225. ISSN 0924-4247

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Abstract:The photomechanical effect induced by periodically varying sub-bandgap illumination in thin ZnO films deposited on oxidized Si has been demonstrated for the first time. The efficiency of this effect is at least one order of magnitude higher as compared to the photothermal activation of Si. Thus it can be considered as a powerful optical drive for resonant sensors. A phenomenological model of the mechanisms involved in the process is proposed. The optomechanical effect can also be used as a complementary method in determination of the surface state parameters of ZnO films.
Item Type:Article
Copyright:© 1990 Elsevier
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/70613
Official URL:http://dx.doi.org/10.1016/0924-4247(90)80062-A
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