On-chip integrated lasers in Al2O3:Er on silicon


Pollnau, M. and Bradley, J.D.B. and Ay, F. and Bernhardi, E.H. and Ridder, R.M. de and Wörhoff, K. (2010) On-chip integrated lasers in Al2O3:Er on silicon. In: Louay A. Eldada & El-Hang Lee (Eds.), Optoelectronic Integrated Circuits XII. Proceedings of the SPIE, 7605 . SPIE, the international Society for Optical Engineering, Bellingham, WA, USA, 76050M. ISBN 9780819480019

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Abstract:Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.
Item Type:Book Section
Copyright:© 2010 SPIE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/70511
Official URL:https://doi.org/10.1117/12.845842
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