Rare-earth-ion-doped $Al_2O_$3 for integrated optical amplification


Wörhoff, K. and Bradley, J.D.B. and Agazzi, L. and Pollnau, M. (2010) Rare-earth-ion-doped $Al_2O_$3 for integrated optical amplification. In: J.E. Broquin & C.M. Greiner (Eds.), Integrated Optics: Devices, Materials, and Technologies XIV. Proceedings of the SPIE, 7604 . SPIE, the international Society for Optical Engineering, Bellingham, WA, USA, p. 760408. ISBN 9780819480002

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Abstract:Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. 170 Gbit/s high-speed data amplification was demonstrated in an Al2O3:Er3+ channel waveguide with open eye diagrams and without penalty. A lossless 1x2 power splitter has been realized in Al2O3:Er3+ with net gain over a wavelength range of 40 nm (1525-1565 nm) across the complete telecom C-band.
Item Type:Book Section
Copyright:© 2010 SPIE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/70510
Official URL:https://doi.org/10.1117/12.839188
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