The influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the Si---L2,3 VV Auger lineshape

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Sasse, A.G.B.M. and Hoef van der, M.A. and Wormeester, H. and Silfhout van, A. (1989) The influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the Si---L2,3 VV Auger lineshape. Solid State Communications, 71 (1). pp. 65-69. ISSN 0038-1098

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Abstract:The extreme surface sensitiveness of the Si---L2,3 VV Auger process and its ability to probe the atomic electron distribution in the direct neighbourhood of the L2,3-core-hold makes this electron spectroscopic technique a candidate for investigations of the local changes in the electron distribution due to surface reconstruction. In this paper we show, explicitly, the influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the Si---L2,3 VV Auger lineshape. Furthermore, the calculated Auger lineshape will be compared with an experimentally obtained line profile.
Item Type:Article
Copyright:© 1989 Elsevier
Faculty:
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/70480
Official URL:http://dx.doi.org/10.1016/0038-1098(89)90174-9
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