The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy

Sasse, A.G.B.M. and Lakerveld, D.G. and Silfhout van, A. (1988) The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy. Surface Science, 195 (3). L167-L172. ISSN 0039-6028

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Abstract:	We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a clean Si(100)2 × 1 surface at 300 and 550 K. Accurate measurement reeveal well resolved fine structure at Auger SiL2.3VV transitions at 62 and 83 eV. These peaks can be attributed to Si---O and Si---N bonds. Furthermore, it is argued that the broadening in the SiLi2.3VV Auger transition at 83 eV at 300 K may be composed of two nearby peaks, which could be attributed to two different kinds of chemical bonding, Si---N and Si---O. The absence of a peak at 69 eV at room temperature strongly suggests the NO adsorption on a Si(100)2 × 1 surface to be molecular. Dissociation of NO on the Si(100)2 × 1 surface is observed at 550 K.
Item Type:	Article
Copyright:	© 1988 Elsevier Science
Research Group:	Solid State Physics (VSF)
Link to this item:	http://purl.utwente.nl/publications/70276
Official URL:	http://dx.doi.org/10.1016/0039-6028(88)90340-8
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