Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching

Crunteanu, A. and Jänchen, G. and Hoffmann, P. and Pollnau, M. and Buchal, C. and Petraru, A. and Eason, R.W. and Shepherd, D.P. (2003) Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching. Applied physics A: Materials science & processing, 76 (7). pp. 1109-1112. ISSN 0947-8396

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Abstract:	We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 μm and subsequent selective wet chemical etching of the damaged regions by hot H3PO4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1×1016 to 5×1017 He+/cm2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire.
Item Type:	Article
Link to this item:	http://purl.utwente.nl/publications/70077
Official URL:	http://dx.doi.org/10.1007/s00339-002-2027-y
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