Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching

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Crunteanu, A. and Jänchen, G. and Hoffmann, P. and Pollnau, M. and Buchal, C. and Petraru, A. and Eason, R.W. and Shepherd, D.P. (2003) Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching. Applied physics A: Materials science & processing, 76 (7). pp. 1109-1112. ISSN 0947-8396

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Abstract:We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 μm and subsequent selective wet chemical etching of the damaged regions by hot H3PO4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1×1016 to 5×1017 He+/cm2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire.
Item Type:Article
Link to this item:http://purl.utwente.nl/publications/70077
Official URL:http://dx.doi.org/10.1007/s00339-002-2027-y
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