Doped SbTe phase change material in memory cells


Zandt, M.A.A. in ‘t and Jedema, F.J. and Gravesteijn, D.J. and Attenborough, K. and Wolters, R.A.M. (2009) Doped SbTe phase change material in memory cells. In: International Materials Research Congress, IMRC 2009, 16-21 August 2009, Cancun, Mexico.

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Abstract:Phase Change Random Access Memory (PCRAM) is investigated as replacement for Flash. The memory concept is based on switching a chalcogenide from the crystalline (low ohmic) to the amorphous (high ohmic) state and vice versa. Basically two memory cell concepts exist: the Ovonic Unified Memory (OUM) and the line cell. Switching to the high ohmic or low ohmic state is done using Joule heating. A relatively short (~ns) electrical pulse with large amplitude is used to heat the crystalline phase to melt and quench into the amorphous state (RESET). A pulse with smaller amplitude heats the amorphous region above its crystallization temperature (lower than the melting temperature) and the material returns into the crystalline state (SET). In the OUM cell this will be at the electrode-phase change material contact, whereas for the line cell this will be at the position where the current density is the highest.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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