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The pressfet: an integrated electret-mosfet based pressure sensor
Voorthuyzen, J.A. and Bergveld, P. (1988) The pressfet: an integrated electret-mosfet based pressure sensor. Sensors and Actuators, 14 (4). pp. 349-360. ISSN 0250-6874
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| Abstract: | We present a new MOSFET-based pressure sensor, incorporating an air gap that is a function of pressure and a permanently charged dielectric layer (electret) between the gate and bulk of the MOS structure. In this way we obtain a MOSFET with a pre-charged variable gate capacitance. The theory of this sensor and the NMOS-compatible process for its realization are given. We present also the first experimental results on this new sensor. We have determined the characteristics of sensors with outer dimensions of 1 mm × 2 mm × 0.3 mm and measured a maximum sensitivity of about 10 mA/A/100 mm Hg, which is about ten times higher than the sensitivity of piezoresistive pressure sensors with comparable dimensions. Drawbacks of the present sensor design are a relatively high temperature sensitivity and a rather complex fabrication process. |
| Item Type: | Article |
| Copyright: | © 1988 Elsevier Science |
| Link to this item: | http://purl.utwente.nl/publications/70054 |
| Official URL: | http://dx.doi.org/10.1016/0250-6874(88)80024-6 |
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