Surface states on clean Ge(111) surfaces

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Zandvliet, H.J.W. and Silfhout, A. van (1988) Surface states on clean Ge(111) surfaces. Surface Science, 195 (1-2). pp. 138-150. ISSN 0039-6028

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Abstract:Surface states on Ge(111)c(2X8) are detected using ellipsometry, field effect and surface conductivity measurements. Optical transitions at 1.7, 1.9, 2.3, and 3.0 eV are observed. Surface states in the gap are detected with DC field effect measurements. We found a relationship between the surface conductivity and the ellipsometric parameter ψ at the optical transitions during oxygen adsorption. A maximum in the surface conductivity is found for a coverage of 0.15 monolayer oxygen, at the same point Surnev detected (with work function measurements) a change of the elementary dipole moment.
Item Type:Article
Copyright:© 1988 Elsevier Science
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/70050
Official URL:http://dx.doi.org/10.1016/0039-6028(88)90786-8
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