Missing dimer defects investigated by adsorption of nitric oxide (NO) on silicon (100) 2 × 1


Sasse, A.G.B.M. and Kleinherenbrink, P.M. and Silfhout, A. van (1988) Missing dimer defects investigated by adsorption of nitric oxide (NO) on silicon (100) 2 × 1. Surface Science, 199 (1-2). pp. 243-260. ISSN 0039-6028

open access
Abstract:This paper describes a study concerning the interaction of nitric oxide (NO) with the clean Si(100)2×1 surface in ultra-high vacuum at room temperature. Differential reflectometry (DR) in the photon energy range of 2.4–4.4 eV. Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) have been used to investigate the chemisorption of NO on Si(100)2×1. With this combination of techniques it is possible to make an analysis of the geometric and electronic structure and chemical composition of the surface layer. The aim of the present study was to explain the experimental results of the adsorption of NO on the clean Si(100)2×1 at 300 K. Analysing the electronic and geometric structure of a simplified stepped 2×1 reconstructed Si(100) surface and of the NO molecule in combination with the use of Woodward-Hoffmann rules (WHR) we were able to model a surface defect specific adsorption mechanism. Surface defects such as missing dimer defects seem to play an important role in the adsorption mechanism of NO on the silicon surface. The experimental results are consistent with this developed model. We also suggest a relation between the missing dimer defects and the number of steps on the silicon surface.
Item Type:Article
Copyright:© 1988 Elsevier Science
Research Group:
Link to this item:http://purl.utwente.nl/publications/70045
Official URL:https://doi.org/10.1016/0039-6028(88)90410-4
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page