Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV

Oosterhoff, S. (1988) Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV. Nuclear Instruments and Methods in Physics Research. Section B: Beam interactions with materials and atoms, 30 (1). pp. 1-12. ISSN 0168-583X

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Abstract:	Boron and phosphorus were implanted in p-type and n-type silicon wafers in the energy range from 0.1 to 1.5 MeV. Three different methods were used to determine the distribution of the ions: SIMS, CV and NRA. The results were fitted to a Pearson IV distribution in order to extract moments for describing the distributions analytically. The projected ranges agree well with the theoretical values. Deviations are observed at higher energies. Projected range standard deviations are significantly greater than the tabulated values. The skewness clearly deviates from available tabulated data, although the same trend is observed.
Item Type:	Article
Copyright:	© 1988 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:	http://purl.utwente.nl/publications/70036
Official URL:	http://dx.doi.org/10.1016/0168-583X(88)90070-5
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