BaxSr1−xTi1.02O3 metal–insulator–metal capacitors on planarized alumina substrates

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Tiggelman, M.P.J. and Reimann, K. and Klee, M. and Mauczok, R. and Keur, W. and Hueting, R.J.E. (2010) BaxSr1−xTi1.02O3 metal–insulator–metal capacitors on planarized alumina substrates. Thin Solid Films, 518 (10). pp. 2854-2959. ISSN 0040-6090

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Abstract:Nanocrystalline barium strontium titanate (BaxSr1−xTi1.02O3) thin films with a barium content of x=0.8, 0.9 and 1 have been fabricated in a metal–insulator–metal configuration on glass-planarized alumina substrates.
Cost-effective processing measures have been utilized by using poly-crystalline alumina substrates, wetchemical processing of the dielectric, and by a small physical area of the ferroelectric capacitors (as low as 50 μm2 for radio frequencies measurements). Glass-planarization on alumina ceramic substrates enables barium strontium titanate films with high quality and homogeneity. We mainly focus on fine-tuning the electrical performance in the low gigahertz range (<10 GHz). Extensive micro-structural and electrical characterization has been performed. Micro-structural information is obtained by: Transmission Electron Microscopy, Scanning Electron Microscopy and X-ray diffraction. The dielectric response is investigated as a function of temperature, frequency and electric field for each sample. We measured a relatively constant permittivity for typical operating temperatures of applications. The quality factor Q is between 21 and 27 at 1 GHz at zero DC bias and the tuning ratio η between 1.8 and 2.2 at |E|=0.4 MV/cm.
Item Type:Article
Copyright:© 2010 Elsevier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/70015
Official URL:http://dx.doi.org/10.1016/j.tsf.2009.09.049
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