Low-Pressure CVD of Germanium-Silicon films using Silane and Germane sources


Kovalgin, Alexey and Holleman, Jisk and Salm, Cora and Woerlee, Pierre (2001) Low-Pressure CVD of Germanium-Silicon films using Silane and Germane sources. In: Thin Film Transistors Technologies V, 23-25 Oct 2000, Phoenix, Arizona, USA (pp. pp. 269-275).

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Abstract:In this work a study of Low Pressure Chemical Vapour Deposition (LPCVD) of Germanium-Silicon films has been carried out. The films were deposited on thermally oxidised silicon wafers using a horizontal hot-wall LPCVD system, at deposition temperatures ranging from 430 to 480 oC and total pressures from 3 to 200 Pa. Pure GeH4 and SiH4 gas sources were used for the experiments. Growth kinetics and texture of GexSi1-x films versus varying deposition conditions, resulting in different film properties, were investigated. The effect of Germanium content in the layers on deposition rate at 430 oC and the change in the film crystallinity caused by deposition at different deposition pressures were studied.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/70005
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