B/P Doping in application of silicon oxynitride based integrated optics


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Sun, F. and Hussein, M.G. and Wörhoff, K. and Sengo, G. and Driessen, A. (2009) B/P Doping in application of silicon oxynitride based integrated optics. In: European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference, CLEO Europe - EQEC 2009, 14-19 June 2009, Munich, Germany.

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Abstract:In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in B/P-doped layers.
Item Type:Conference or Workshop Item
Copyright:© 2009 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/69970
Official URL:http://dx.doi.org/10.1109/CLEOE-EQEC.2009.5196496
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