B/P Doping in
 application of 
silicon oxynitride based integrated


Sun, F. and Hussein, M.G. and Wörhoff, K. and Sengo, G. and Driessen, A. (2009) B/P Doping in
 application of 
silicon oxynitride based integrated
 optics. In: European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference, CLEO Europe - EQEC 2009, 14-19 June 2009, Munich, Germany (pp. CE5.1 TUE).

open access
Abstract:In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in B/P-doped layers.
Item Type:Conference or Workshop Item
Copyright:© 2009 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/69970
Official URL:https://doi.org/10.1109/CLEOE-EQEC.2009.5196496
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