Higher gain in 977-nm-pumped Al $_2$ O $_3$ :Er $^{3+}$ integrated optical amplifiers

Bradley, J.D.B. and Agazzi, L. and Geskus, D. and Ay, F. and Wörhoff, K. and Pollnau, M. (2009) Higher gain in 977-nm-pumped Al $_2$ O $_3$ :Er $^{3+}$ integrated optical amplifiers. In: European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference, CLEO Europe - EQEC 2009, 14-19 June 2009, Munich, Germany.

Preview

PDF
207Kb

Abstract:	In this paper we experimentally compare pumping at 977 nm and 1480 nm and the influence on gain in an Al2O3:Er3+ amplifier. We show that significantly higher gain can be achieved when pumping at 977 nm, and a record-high peak gain and gain bandwidth obtains compared to previous results in this material. Al2O3:Er3+ straight channel waveguide amplifiers were fabricated on thermally-oxidized silicon substrates by reactive co-sputtering, standard lithography and reactive ion etching. The amplifiers were ~6-cm-long with a waveguide cross section of 1 um x 4 um and an etch depth of ~70 nm. The waveguide dimensions were selected for single-mode propagation at wavelengths of 977 nm and above, good overlap of pump and signal mode profiles (for both 977-nm and 1480-nm pumping) and strong confinement of the propagating pump and signal within the active region.
Item Type:	Conference or Workshop Item
Copyright:	© 2009 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/69969
Official URL:	http://dx.doi.org/10.1109/CLEOE-EQEC.2009.5196507
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Higher gain in 977-nm-pumped AlO:Er integrated optical amplifiers

Higher gain in 977-nm-pumped Al $_2$ O $_3$ :Er $^{3+}$ integrated optical amplifiers