2.0 dB/cm gain in an Al $_2$ O $_3$ :Er $^{3+}$ waveguide on silicon

Bradley, J.D.B. and Agazzi, L. and Geskus, D. and Ay, F. and Wörhoff, K. and Pollnau, M. (2009) 2.0 dB/cm gain in an Al $_2$ O $_3$ :Er $^{3+}$ waveguide on silicon. In: Conference on Lasers and Electro-Optics, 2-4 June 2009, Baltimore, Maryland, USA.

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Abstract:	Er concentration, energy-transfer upconversion and gain were investigated in Er-doped aluminum oxide channel waveguides. Net gain of up to 2.0 dB/cm was measured, demonstrating this material to provide a competitive active integrated optics technology.
Item Type:	Conference or Workshop Item
Copyright:	© 2009 Optical Society of America
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/69965
Official URL:	http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2009-CThCC2
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2.0 dB/cm gain in an AlO:Er waveguide on silicon