$Al2O3:Er^3^+$ as a new platform for active integrated optics

Pollnau, M. and Bradley, J.D.B. and Agazzi, L. and Bernhardi, E.H. and Ay, F. and Wörhoff, K. and Ridder de, R.M. (2009) $Al2O3:Er^3^+$ as a new platform for active integrated optics. In: 11th International Conference on Transparent Optical Networks, ICTON 2009, June 28 - July 2, 2009, Azores.

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Abstract:	Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of >20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been obtained. Grating structures for on-chip integrated cavities and distributed-feedback lasers have been fabricated in this material and are currently under investigation.
Item Type:	Conference or Workshop Item
Copyright:	© 2009 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/69955
Official URL:	http://dx.doi.org/10.1109/ICTON.2009.5185260
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