$Al2O3:Er^3^+$ as a new platform for active integrated optics


Pollnau, M. and Bradley, J.D.B. and Agazzi, L. and Bernhardi, E.H. and Ay, F. and Wörhoff, K. and Ridder, R.M. de (2009) $Al2O3:Er^3^+$ as a new platform for active integrated optics. In: 11th International Conference on Transparent Optical Networks, ICTON 2009, June 28 - July 2, 2009, Azores (pp. We.D2.1).

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Abstract:Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of >20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been obtained. Grating structures for on-chip integrated cavities and distributed-feedback lasers have been fabricated in this material and are currently under investigation.
Item Type:Conference or Workshop Item
Copyright:© 2009 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/69955
Official URL:https://doi.org/10.1109/ICTON.2009.5185260
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