Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications


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Sun, F. and Driessen, A. and Wörhoff, K. (2009) Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications. In: 2009 Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium.

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Abstract:In this work plasma enhanced chemical vapor deposition (PECVD) were adopted to achieve boron/phosphorous (B/P) doped silicon oxynitride (SiON) layers. By adjusting the flow rates of corresponding gas precursor (PH3/Ar or B2H6/Ar), SiON layers with different B or P concentrations were obtained. Measurements by X-ray photoelectron spectroscopy (XPS) have shown that PH3 can result in more efficient doping in the layers than B2H6. Compared with B-doped samples, reduction of the hydrogen content can be more easily observed in P-doped SiON layers, as been confirmed by Fourier transform infrared spectroscopy. Hydrogen-related chemical bonds became undetectable after annealing of samples at temperatures as low as 700°C. These results are quite helpful to further research on B/P co-doped SiON layers in application of integrated optical waveguide devices.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/69947
Organisation URL:http://www.photonics-benelux.org
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