Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications

Sun, F. and Driessen, A. and Wörhoff, K. (2009) Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications. In: 2009 Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium.

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Abstract:	In this work plasma enhanced chemical vapor deposition (PECVD) were adopted to achieve boron/phosphorous (B/P) doped silicon oxynitride (SiON) layers. By adjusting the flow rates of corresponding gas precursor (PH3/Ar or B2H6/Ar), SiON layers with different B or P concentrations were obtained. Measurements by X-ray photoelectron spectroscopy (XPS) have shown that PH3 can result in more efficient doping in the layers than B2H6. Compared with B-doped samples, reduction of the hydrogen content can be more easily observed in P-doped SiON layers, as been confirmed by Fourier transform infrared spectroscopy. Hydrogen-related chemical bonds became undetectable after annealing of samples at temperatures as low as 700°C. These results are quite helpful to further research on B/P co-doped SiON layers in application of integrated optical waveguide devices.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/69947
Organisation URL:	http://www.photonics-benelux.org
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