Neodymium-doped Al2O3 Channel Waveguide Amplifiers


Dalfsen, K. van and Yang, J. and Ay, F. and Wörhoff, K. and Pollnau, M. (2009) Neodymium-doped Al2O3 Channel Waveguide Amplifiers. In: 2009 Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium (pp. pp. 149-152).

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Abstract:Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates by reactive co-sputtering and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transition at 1064 nm was experimentally investigated with various Nd3+ concentrations. With approximately 12 mW of launched pump power at 800 nm, a maximum gain of 4.0 dB/cm was demonstrated in a 1-cm-long Al2O3:Nd channel waveguide sample with a Nd3+ concentration of 1.68x1020 cm-3. Investigations of gain on the Nd3+ ground-state transition around 880 nm are under way. This wavelength range is of interest for amplification of signals transmitted through optical backplanes.
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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