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Buried injector logic, a vertical IIL using deep ion implantation
Mouthaan, A.J. (1987) Buried injector logic, a vertical IIL using deep ion implantation. Solid-State Electronics, 30 (12). pp. 1243-1249. ISSN 0038-1101
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| Abstract: | A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is saturated. d.c. and dynamic analysis of BIL-gate behaviour are given. A minimum gate delay of well below 1 ns is projected if collector areas are smaller than 10 μm2 within an oxide isolated structure. A relation between maximum injector current density and device size is derived. |
| Item Type: | Article |
| Copyright: | © 1987 Elsevier Science |
| Faculty: | Electrical Engineering, Mathematics and Computer Science (EEMCS) |
| Link to this item: | http://purl.utwente.nl/publications/69853 |
| Official URL: | http://dx.doi.org/10.1016/0038-1101(87)90047-5 |
| Export this item as: | BibTeX EndNote HTML Citation Reference Manager |
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