A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Sebastiano, Fabio and Breems, Lucien J. and Makinwa, Kofi A.A. and Dargo, Salvatore and Leenaerts, Domine M.W. and Nauta, Bram (2009) A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios. IEEE Journal of Solid-State Circuits, 44 (7). pp. 2002-2009. ISSN 0018-9200

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Abstract:	The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm
Item Type:	Article
Copyright:	© 2009 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/69828
Official URL:	http://dx.doi.org/10.1109/JSSC.2009.2020247
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