Silicide-to-silicon specific contact resistance characterization : test structures and models

Stavitski, Natalie (2009) Silicide-to-silicon specific contact resistance characterization : test structures and models. thesis.

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Abstract:	The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is expected that the contact resistance between silicide and source/drain regions will significantly contribute to the total series resistance. The reduction of this contact resistance and the corresponding specific contact resistance is an important issue. Thus the ability to accurately obtain the specific silicide-tosilicon contact resistance is essential for contact processing. It therefore requires dedicated test structures and a reliable extraction method of this specific contact resistance. The main purpose of this thesis is to develop and examine various types of test structures and the corresponding models for silicide-to-silicon specific contact resistance characterization.
Item Type:	Thesis
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/69803
Official URL:	http://dx.doi.org/10.3990/1.9789036529396
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