Silicide-to-silicon specific contact resistance characterization : test structures and models


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Stavitski, Natalie (2009) Silicide-to-silicon specific contact resistance characterization : test structures and models. thesis.

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Abstract:The performance of Si integrated circuits depends on the transistor drive
current. The drive current of a MOS transistor is determined by the total
device resistance, which consists of the channel resistance and the parasitic
resistances associated with dopant diffusion areas and contacts. It is expected
that the contact resistance between silicide and source/drain regions will
significantly contribute to the total series resistance. The reduction of this
contact resistance and the corresponding specific contact resistance is an
important issue. Thus the ability to accurately obtain the specific silicide-tosilicon contact resistance is essential for contact processing. It therefore
requires dedicated test structures and a reliable extraction method of this
specific contact resistance. The main purpose of this thesis is to develop and examine various types of test structures and the corresponding models for silicide-to-silicon specific contact resistance characterization.
Item Type:Thesis
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/69803
Official URL:http://dx.doi.org/10.3990/1.9789036529396
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