170 GBit/s transmission in an erbium-doped waveguide amplifier on silicon


Bradley, Jonathan D.B. and Costa e Silva, Maria and Gay, Mathilde and Bramerie, Laurent and Driessen, Alfred and Wörhoff, Kerstin and Simon, Jean-Claude and Pollnau, Markus (2009) 170 GBit/s transmission in an erbium-doped waveguide amplifier on silicon. Optics Express, 17 (24). pp. 22201-22208. ISSN 1094-4087

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Abstract:Signal transmission experiments were performed at 170 Gbit/s in an integrated $Al_2O_3:Er^{3+}$ waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random $2^{7}-1$ bit sequence.
Item Type:Article
Additional information:Open access article
Copyright:© 2009 Optical Society of America
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/69658
Official URL:https://doi.org/10.1364/OE.17.022201
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