Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

Vos, M. and Boerma, D.O. and Smulders, P.J.M. and Oosterhoff, S. (1986) Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis. Nuclear Instruments and Methods in Physics Research. Section B: Beam interactions with materials and atoms, 17 (3). pp. 234-241. ISSN 0168-583X

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Abstract:	Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from channeling of MeV α-particles. This was done in the as-implanted case and after furnace annealing at temperatures up to 1000°C. A short description of the applied techniques is presented. The crystal disorder was found to almost vanish during annealing at 600°C and to reappear at higher annealing temperatures at a depth coinciding with the projected range of the boron ions. Both the boron and the disorder depth profiles are broadened after annealing at 1000°C. The results agree with recent findings on defect annealing in silicon.
Item Type:	Article
Copyright:	© 1986 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:	http://purl.utwente.nl/publications/69601
Official URL:	http://dx.doi.org/10.1016/0168-583X(86)90062-5
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