The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

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Holtslag, A.H.M. and Slager, U.C. and Silfhout van, A. (1985) The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces. Surface Science, 152-15 (Part 2). pp. 1079-1085. ISSN 0039-6028

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Abstract:Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.
Item Type:Article
Copyright:© 1985 Elsevier Science
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Link to this item:http://purl.utwente.nl/publications/69499
Official URL:http://dx.doi.org/10.1016/0039-6028(85)90523-0
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