Charge loss experiments in surface channel CCD's explained by the McWhorter interface states model

Penning De Vries, R.G.M. and Wallinga, H. (1985) Charge loss experiments in surface channel CCD's explained by the McWhorter interface states model. Physica B+C, 129 (1-3). pp. 301-305. ISSN 0378-4363

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Abstract:	On the basis of the McWhorter interface states model the CCD charge loss is derived as a function of bias charge, signal charge and channel width. As opposed to existing models, the charge loss is now attributed to interface states in the entire gate area, even for high bias charge levels. Experimental confirmation of the novel model is presented.
Item Type:	Article
Copyright:	© 1985 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/69448
Official URL:	http://dx.doi.org/10.1016/0378-4363(85)90590-X
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