The consequences of the application of a floating gate on d.c.-MISFET characteristics
|Abstract:||In the literature the influence of the conducting layer, sometimes called a floating gate, upon d.c.-MISFET characteristics is ignored or only treated in a phenomenological way. Our intentions in this paper are to present a study of the consequences of a conducting layer in an exact way by using the MISFET theory described earlier.
It is found that the d.c.-characteristics are influenced by parasitic capacitances from the conducting layer to source and drain and the charge-voltage relations along the channel of the MIS transistor.
The theoretical considerations are verified by simulations with Spice 2 and some experimental results and are in agreement with the characteristics already given in the literature referred to.
|Copyright:||© 1984 Elsevier Science|
|Link to this item:||http://purl.utwente.nl/publications/69368|
|Export this item as:||BibTeX|
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