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The consequences of the application of a floating gate on d.c.-MISFET characteristics
Voorthuyzen, J.A. and Bergveld, P. (1984) The consequences of the application of a floating gate on d.c.-MISFET characteristics. Solid-State Electronics, 27 (4). pp. 311-315. ISSN 0038-1101
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| Abstract: | In the literature the influence of the conducting layer, sometimes called a floating gate, upon d.c.-MISFET characteristics is ignored or only treated in a phenomenological way. Our intentions in this paper are to present a study of the consequences of a conducting layer in an exact way by using the MISFET theory described earlier.
It is found that the d.c.-characteristics are influenced by parasitic capacitances from the conducting layer to source and drain and the charge-voltage relations along the channel of the MIS transistor. The theoretical considerations are verified by simulations with Spice 2 and some experimental results and are in agreement with the characteristics already given in the literature referred to. |
| Item Type: | Article |
| Copyright: | © 1984 Elsevier Science |
| Link to this item: | http://purl.utwente.nl/publications/69368 |
| Official URL: | http://dx.doi.org/10.1016/0038-1101(84)90163-1 |
| Export this item as: | BibTeX EndNote HTML Citation Reference Manager |
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