Low pressure chemical vapour deposition at quasi-high flow
|Abstract:||A new chemical vapour deposition (CVD) technique is presented. It is especially advantageous for the deposition of compound materials. The technique improves the uniformity and reproducibility of the deposition. The economical use of gaseous reactants is improved by a factor varying between 5 and 20. This is important in the case of expensive metal-organic CVD methods. The method consists in the manifold repetition of the following sequence: evacuation, filling and deposition in a horizontal tube reactor. The filling time of 50 ms is short compared with the deposition period 1 s.
The advantages of the method are demostrated with results for the deposition of undoped, phosphorus-doped and boron-doped silicon and SiO2.
|Copyright:||© 1984 Elsevier Science|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/69365|
|Export this item as:||BibTeX|
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