TFTs as photodetectors for optical interconnects


Share/Save/Bookmark

Rangarajan, Balaji and Brunets, Ihor and Holleman, Jisk and Kovalgin, Alexey Y. and Schmitz, Jurriaan (2009) TFTs as photodetectors for optical interconnects. In: 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 26-27 Nov 2009, Veldhoven, The Netherlands (pp. pp. 52-54).

open access
[img]
Preview
PDF
303kB
Abstract:In this work we are looking at the prospect of using poly-silicon based Thin Film Transistors (TFTs) as photodetectors for optical interconnects that can detect light effectively at 1100nm wavelength from silicon based Light Emitting Diodes (LEDs). These TFTs were fabricated from laser crystallized silicon and were characterized under darkness and illumination. The photosensitivities of these devices were limited due to the presence of aluminium as their gate electrode but have shown us the possibility of a new approach to photodetection.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/69089
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page