Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry


Share/Save/Bookmark

Van Bui, Hao and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. and Schmitz, J. (2009) Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry. In: 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE, 26-27 November 2009, Veldhoven, The Netherlands (pp. pp. 59-62).

[img] PDF
Restricted to UT campus only
: Request a copy
1MB
Abstract:Thin TiN films have many important applications in Integrated Circuit (IC) technology. In spite of its chemical inertness, it is reported that TiN can be oxidized when exposed to oxidants (O2, H2O, etc.). To avoid an undesired oxidation of the metal-nitride layers, a study on this process is necessary. In this work, we present our study on thermal atomic layer deposition (ALD) of TiN films followed by their dry oxidation in oxygen ambient. For both processes, in-situ monitoring by spectroscopic ellipsometry is carried out.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/69059
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page