An initial modelling and simulation study on the 1D Si-Based LED


Share/Save/Bookmark

Puliyankot, V. and Hueting, R.J.E. and Schmitz, J. (2009) An initial modelling and simulation study on the 1D Si-Based LED. In: 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE, 26-27 November 2009, Veldhoven, The Netherlands.

[img]PDF
Restricted to UT campus only
: Request a copy
330Kb
Abstract:In this paper we present an initial modelling and simulation study of a 1D Si light-emitting diode (LED). A new model is presented describing dc electrical characteristics and the internal quantum efficiency as a function of the applied bias. The model takes into account all recombination processes focusing on the active region only and is shown to be in good agreement with the simulation results. The maximum internal quantum efficiency (η) of a silicon LED was found to be about 5.3%. Future research directions include finding the temperature dependency of the LED and developing a full model which describes the quantum efficiency of the whole LED as a function of the voltage or current, including two-dimensional effects, parasitic recombination centers and hetero structures.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/69057
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page