Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers

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Patel, R.S. and Dash, S.P. and Jong, M.P. de and Jansen, R. (2009) Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers. Journal of Applied Physics, 106 (1). 016107. ISSN 0021-8979

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Abstract:Unambiguous proof of spin transport in semiconductor spintronic devices requires a control experiment to exclude spurious signals that arise from the presence of the ferromagnetic contacts. It is shown here that insertion of a low-work-function Yb nanolayer in ferromagnetic tunnel contacts to silicon allows a selective suppression of the tunnel spin polarization for 2 nm of Yb and simultaneous control of the Schottky barrier height. The insertion of a nonmagnetic nanolayer provides a versatile method to exclude artifacts and a solution for nanoscale devices or other geometries in which the frequently employed Hanle effect cannot be applied and a control experiment did not exist.
Item Type:Article
Copyright:© 2009 American Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/69037
Official URL:http://dx.doi.org/10.1063/1.3159638
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