Top-down fabrication of Sub-30 nm Monocrystalline Silicon nanowires using conventional microfabrication

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Chen, Songyue and Bomer, Johan G. and Wiel, Wilfred G. van der and Carlen, Edwin T. and Berg, Albert van den (2009) Top-down fabrication of Sub-30 nm Monocrystalline Silicon nanowires using conventional microfabrication. ACS Nano, 3 (11). pp. 3485-3492. ISSN 1936-0851

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Abstract:We report a new low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to similar to 100 mu m can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90% using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.
Item Type:Article
Copyright:© 2009 American Chemical Society
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/68876
Official URL:http://dx.doi.org/10.1021/nn901220g
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