Characterization of phosphorous and boron doped silicon oxynitride prepared plasma enhanced chemical vapor deposition

Sun, F. and Sengo, G. and Driessen, A. and Wörhoff, K. (2009) Characterization of phosphorous and boron doped silicon oxynitride prepared plasma enhanced chemical vapor deposition. ECS Transactions, 25 (8). pp. 711-718. ISSN 1938-5862

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Abstract:	5% $B_2H_6/Ar$ and 5% $PH_3/Ar$ were introduced to the plasma enhanced chemical vapor deposition process of silicon oxynitride. The bond configurations and refractive indexes of the boron/phosphorous (B/P) doped layers were characterized by Fourier transform infrared spectroscopy and the prism coupling method, respectively. The effect of annealing on the N-H bonds, which mainly contribute to undesired optical losses around 1500 nm wavelength, has been studied. Compared to undoped samples, significant reduction of N-H bonds was observed in the as-deposited B/P doped layers. The reduction of N-H bonds during annealing was found to depend primarily on the applied temperatures rather than on the duration of the annealing process. Complete elimination of N-H bonds has been achieved by temperature treatment of samples at 70C for 3 hours.
Item Type:	Article
Copyright:	© 2009 The Electrochemical Society
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/68851
Official URL:	http://dx.doi.org/10.1149/1.3207659
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