Characterization of phosphorous and boron doped silicon oxynitride prepared plasma enhanced chemical vapor deposition

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Sun, F. and Sengo, G. and Driessen, A. and Wörhoff, K. (2009) Characterization of phosphorous and boron doped silicon oxynitride prepared plasma enhanced chemical vapor deposition. ECS Transactions, 25 (8). pp. 711-718. ISSN 1938-5862

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Abstract:5% $B_2H_6/Ar$ and 5% $PH_3/Ar$ were introduced to the plasma enhanced chemical vapor deposition process of silicon oxynitride. The bond configurations and refractive indexes of the boron/phosphorous (B/P) doped layers were characterized by Fourier transform infrared spectroscopy and the prism coupling method, respectively. The effect of annealing on the N-H bonds, which mainly contribute to undesired optical losses around 1500 nm wavelength, has been studied. Compared to undoped samples, significant reduction of N-H bonds was observed in the as-deposited B/P doped layers. The reduction of N-H bonds during annealing was found to depend primarily on the applied temperatures rather than on the duration of the annealing process. Complete elimination of N-H bonds has been achieved by temperature treatment of samples at 70C for 3 hours.

Item Type:Article
Copyright:© 2009 The Electrochemical Society
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/68851
Official URL:http://dx.doi.org/10.1149/1.3207659
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