The influence of the pH on the electrolyte-SiO2-Si system studied by ion-sensitive fet measurements and quasi-static C-V measurements
Rooij de, N.F. and Bergveld, P. (1980) The influence of the pH on the electrolyte-SiO2-Si system studied by ion-sensitive fet measurements and quasi-static C-V measurements. Thin Solid Films, 71 (2). pp. 327-331. ISSN 0040-6090
|Abstract:||The responses of ion-sensitive FETs (ISFETs) with thermally grown SiO2 gate regions and of electrolyte-SiO2-Si (EOS) structures to stepwise changes in the pH were studied.
In addition to a change in the boundary potential at the electrolyte-SiO2 interface which accounts for the observed initial response of ISFETs, a mechanism is also proposed in which one or other hydrogen-bearing species interacts with the surface states at the SiO2-Si interface.
This proposed mechanism is based on the observed time drift in the response of ISFETs and on the changes in the shape of the quasi-static C-V curves of the EOS structures.
|Copyright:||© 1980 Elsevier Science|
|Link to this item:||http://purl.utwente.nl/publications/68687|
|Export this item as:||BibTeX|
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