Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface

Kono, S. and Hanekamp, L.J. and Silfhout van, A. (1977) Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface. Surface Science, 65 (2). pp. 633-640. ISSN 0039-6028

Preview

PDF
487Kb

Abstract:	Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear.
Item Type:	Article
Copyright:	© 1977 Elsevier Science
Research Group:	Solid State Physics (VSF)
Link to this item:	http://purl.utwente.nl/publications/68361
Official URL:	http://dx.doi.org/10.1016/0039-6028(77)90471-X
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page