Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling

Share/Save/Bookmark

Kovalgin, A.Y. and Boogaard, A. and Brunets, I. and Aarnink, A.A.I. and Wolters, R.A.M. (2009) Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling. ECS Transactions, 25 (8). pp. 23-32. ISSN 1938-5862

[img] PDF
Restricted to UT campus only
: Request a copy
253kB
Abstract:Our study is focused on Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon dioxide films at low temperatures (< 150 oC) using Inductively Coupled (IC) High-Density (HD) plasma source. We recently fabricated Thin Film Transistors (TFTs) with high-quality ICPECVD gate oxides, which exhibited a competitive performance. For better understanding of the influence of deposition parameters on both the deposition kinetics and oxide quality, we have modeled the Ar-SiH4-N2O plasma system with 173 chemical reactions. We simulated concentrations of 43 reactive species (such as e.g. SiHx radicals and SiHx + (x=0-3) ions, polysilanes, SiO, SiN, SiH3O, SiH2O, HSiO, etc., as well as atomic hydrogen, nitrogen and oxygen) in plasma. We further used our simulations to qualitatively explain (in terms of concentrations of the reactive species) the influence of SiH4/N2O gas-flow ratio and total gas pressure on film electrical properties and deposition rate.
Item Type:Article
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/67997
Official URL:http://dx.doi.org/10.1149/1.3207572
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 264031