Specific contact resistance measurements of metal-semiconductor junctions


Stavitski, N. and Dal, M.J.H. van and Wolters, R.A.M. and Kovalgin, A.Y. and Schmitz, J. (2005) Specific contact resistance measurements of metal-semiconductor junctions. In: SAFE 2005, 8th Annual Workshop on Circuits, Systems and Signal Processing, 17-18 November 2005, Veldhoven, the Netherlands (pp. pp. 52-55).

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Abstract:Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific metal-to-silicide contact resistance characterization using the Cross-Bridge Kelvin Resistor (CBKR) and Transmission Line Model (TLM), and NiSi as the silicide.
Item Type:Conference or Workshop Item
Copyright: © 2005 STW Technology Foundation
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67817
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