Temperature acceleration of thin gate-oxide degradation


Salm, Cora and Houtsma, Vincent and Kuper, Fred and Woerlee, Pierre (2001) Temperature acceleration of thin gate-oxide degradation. In: 4th annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 174-177).

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Abstract:The temperature dependence of TBD and QBD of ultra-thin (3.9 nm thick) gate oxides was studied for p+-poly Si PMOS and n+-poly Si NMOS capacitors. It was observed that the temperature acceleration of TBD exhibits a non-Arrhenius behavior, meaning that no activation energy could be determined. Furthermore for p+ gate devices both TBD and QBD exhibit a stronger temperature dependence compared to n+ poly-Si MOS devices. Also the dependence on the gate voltage is much stronger. This might have consequences for the reliability of p+ gate devices under operating conditions.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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