1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness


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Kolhatkar, J.S. and Salm, C. and Wallinga, H. (2001) 1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness. In: Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands.

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Abstract:MOS transistors are notorious for their low frequency noise, which increases with decreasing device size. Using a new noise measurement set up, the power spectral density of 1/f noise in MOSFETs decreases, if the transistors are switched “off” periodically (switched bias conditions)[1]. In this work, noise measurements on p-MOSFET are reported, with gate oxide thickness varying from 2 to 20 nm, keeping the electric field in the channel constant at 1.4 MV/cm. The switched bias noise and the reduction in the switched bias noise for p-MOSFET, are investigated as a function of the gate oxide thickness and the switching amplitude. Recently reported literature[2] on explanation for switched biased noise reduction is then compared with our measurement results and some explanations are proposed.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67781
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