Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

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Mannino, G. and Stolk, P.A. and Cowern, N.E.B. and Boer de, W. and Dirks, A.G. and Roozeboom, F. and Berkum van, J.G.M. and Woerlee, P.H. and Toan, N.N. (2001) Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon. Applied Physics Letters, 78 (7). pp. 889-891. ISSN 0003-6951

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Abstract:Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.
Item Type:Article
Copyright:© 2001 American Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:http://purl.utwente.nl/publications/67776
Official URL:http://dx.doi.org/10.1063/1.1347397
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Metis ID: 201440