Growth and properties of LPCVD W-Si-N barrier layers

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Bystrova, S. and Holleman, J. and Woerlee, P.H. (2001) Growth and properties of LPCVD W-Si-N barrier layers. Microelectronic Engineering, 55 (1-4). pp. 189-195. ISSN 0167-9317

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Abstract:In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W�Si�N compounds in the WF6�NF3�SiH4�Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250
Item Type:Article
Copyright:© 2001 Elsevier
Faculty:
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/67772
Official URL:http://dx.doi.org/10.1016/S0167-9317(00)00447-0
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Metis ID: 202112