Growth and properties of LPCVD W-Si-N barrier layers


Bystrova, S. and Holleman, J. and Woerlee, P.H. (2001) Growth and properties of LPCVD W-Si-N barrier layers. Microelectronic Engineering, 55 (1-4). pp. 189-195. ISSN 0167-9317

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Abstract:In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W�Si�N compounds in the WF6�NF3�SiH4�Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250
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Copyright:© 2001 Elsevier
Science and Technology (TNW)
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