Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors

Ackaert, J. and Wang, Z. and De Backer, E. and Colson, P. and Coppens, P. (2001) Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors. Microelectronics Reliability, 41 (9-10). pp. 1403-1407. ISSN 0026-2714

PDF
Restricted to UT campus only: Request a copy
768Kb

Abstract:	In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step. The excessive charging over a large capacitator area results in a discharge over the inter metal dielectric layer (IMD) towards a grounded structure. This CID leads to direct severe yield loss. The charging has been detected, measured and reduced with the help of a non contact surface potential measurement.In this way further yield losses have been prevented. A modelfor the relation between the surface charging potential and the voltage difference between the capacitator and the grounded structure is presented.
Item Type:	Article
Copyright:	© 2001 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67771
Official URL:	http://dx.doi.org/10.1016/S0026-2714(01)00158-5
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 200751