Characterization of Ta-based barrier films on SiLK for Cu-metalization


Bystrova, S. and Holleman, J. and Woerlee, P.H. and Wolters, R.A.M. (2002) Characterization of Ta-based barrier films on SiLK for Cu-metalization. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 9-13).

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Abstract:Structures with Ta, TaxN1-x, Ta90C10, Ta95Si5 on SiLK were tested using in-situ 4- point probe resistance measurements during annealing up to 400oC. The change in normalized resistance by a factor of up to 2.58 was attributed to oxygen diffusion out of SiLK layer into the barriers. No direct chemical reaction between hydrocarbons from the SiLK and the barriers was observed. The concentration coefficient of resistivity for O in Ta was calculated to be 6.7μΩ*cm/at % for pure Ta and 2.65 μΩ*cm/at % in TaxN1-x with x=0.90-0.92
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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