Silicon nitride layers obtained by ECR PECVD


Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2002) Silicon nitride layers obtained by ECR PECVD. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 39-41).

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:It has been found that good quality silicon nitride films can be deposited at room temperature, with an alternate electron cyclotron resonance (ECR) plasma source, called multipolar ECR. The effects of several deposition conditions on physical and electrical properties were studied in order to optimise the deposition process.
The layers were characterised by a refractive index of 1.97, dielectric constant of 7.1, Si/N ratio values of around 0.78 and very low hydrogen content (under 1%). The lowest oxygen contamination (2%) was obtained for the highest nitrogen flow. A decrease in refractive index was observed at high pressure, probably because of insufficient energy to dissociate the nitrogen molecules. The density of interface charge was estimated to be in the range of 3-11•1011 cm-2 and the breakdown field was calculated to be around 12 MV/cm.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page