Plasma nitridation optimization for sub-15 A gate dielectrics


Share/Save/Bookmark

Cubaynes, F.N. and Schmitz, J. and Marel, C. van der and Snijders, J.H.M. and Veloso, A. and Rothschild, A. and Olsen, C. and Date, L. (2003) Plasma nitridation optimization for sub-15 A gate dielectrics. In: International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 28 April - 2 May 2003, Paris, France (pp. pp. 595-604).

open access
[img]
Preview
PDF
201kB
Abstract:The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using XPS. It is shown that N-Si3 bonds are dominant in the ultra-thin plasma nitrided films, and that O2=N-Si bonding configuration is observed when no PNA is applied after the plasma nitridation. The EOT reduction due to an increase of N in the film is not a monotonic increasing function of the DPN time. It seems that there is an optimum N concentration for a given thickness of the base oxide that enables the continued down scaling of DPN base dielectrics.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/67758
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 213274