The influence of technology variation on ggNMOSTs and SCRs against CDM ESD stress

Sowariraj, M.S.B. and Salm, C. and Mouthaan, A.J. and Smedes, T. and Kuper, F.G. (2002) The influence of technology variation on ggNMOSTs and SCRs against CDM ESD stress. Microelectronics Reliability, 42 (9-11). pp. 1287-1292. ISSN 0026-2714

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Abstract:	In this paper we present a systematic study on the effect of process and layout variation for grounded-gate NMOSTs and LVTSCRs in a 0.18
Item Type:	Article
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67755
Official URL:	http://dx.doi.org/10.1016/S0026-2714(02)00136-1
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