Charge transport after hard breakdown in gate oxides

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Bearda, T. and Woerlee, P.H. and Wallinga, H. and Heyns, M.M. (2002) Charge transport after hard breakdown in gate oxides. Japanese Journal of Applied Physics, Part 1: Regular papers, brief communications, and review papers, 41 (4B). pp. 2431-2436. ISSN 0021-4922

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Abstract:We show measurement results and simulations of current�voltage characteristics of Metal-Oxide-Semiconductor capacitors after hard breakdown. The devices exhibit either point contact or diode behaviour, depending on electrode and substrate characteristics and the bias regime. The charge transport characteristics were reproduced in device simulations, including the dependence on the gate dimensions and breakdown spot size.
Item Type:Article
Additional information:Special Issue: Solid State Devices & Materials Part 1, No. 4B, April 2002
Copyright:© 2002 The Japan Society of Applied Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:http://purl.utwente.nl/publications/67748
Official URL:http://dx.doi.org/10.1143/JJAP.41.2431
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