Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process


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Wang, Zhichun and Ackaert, Jan and Salm, Cora and Kuper, Fred G. and Bessemans, Klara and Backer, Eddy de (2003) Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 766-770).

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Abstract:Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the end of PECVD process when a thick oxide layer already covers and insulates the metal lines. The damage occurs during a plasma power ramp down (PPRD) step. The simultaneous presence of elevated temperatures, UV light, a large perimeter conductor and a highly non uniform plasma during PPRD step, causes the damage of gate oxide.
Item Type:Conference or Workshop Item
Copyright:© 2003 STW Technology Foundation
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67746
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